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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolatorTM [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base-emitter resistors. The on-chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and low leakage, they provide excellent performance. * High CTR, H11G1 & H11G2 -- 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA) * High V(BR)CEO, H11G1 -- 100 Volts, H11G2 -- 80 Volts * To order devices that are tested and marked per VDE 0884 requirements, the suffix "V" must be included at end of part number. VDE 0884 is a test option. Applications * Interfacing and coupling systems of different potentials and impedances * Phase and Feedback Controls * General Purpose Switching Circuits * Solid State Relays MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current -- Continuous Forward Current -- Peak Pulse Width = 300 s, 2% Duty Cycle LED Power Dissipation @ TA = 25C Derate above 25C OUTPUT DETECTOR Collector-Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.76 Volts VR IF IF PD 6 60 3 120 1.41 Volts mA Amps mW mW/C 3 2 Symbol Value Unit 1 H11G2* [CTR = 1000% Min] H11G3 [CTR = 200% Min] *Motorola Preferred Devices STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A-04 SCHEMATIC 6 5 4 PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE N.C. EMITTER COLLECTOR BASE Emitter-Base Voltage Collector Current -- Continuous Detector Power Dissipation @ TA = 25C Derate above 25C TOTAL DEVICE Total Device Power Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 s) Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) VEBO IC PD Volts mA mW mW/C PD TA Tstg TL VISO 250 2.94 - 55 to +100 - 55 to +150 260 7500 mW mW/C C C C Vac(pk) 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 (c)MotorolaInc. 1995 Motorola, Optoelectronics Device Data 1 H11G1 H11G2 H11G3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)(1) Characteristic INPUT LED Reverse Leakage Current (VR = 3 V) Forward Voltage IF = 10 mA) Capacitance (V = 0 V, f = 1 MHz) DARLINGTON OUTPUT (TA = 25C and IF = 0 unless otherwise noted) Collector-Emitter Breakdown Current (IC = 1 mA, IF = 0) V(BR)CEO H11G1 H11G2 H11G3 V(BR)CBO H11G1 H11G2 H11G3 V(BR)EBO ICEO H11G1 H11G1 H11G2 H11G2 H11G3 CCB IC (CTR)(2) H11G1, 2 H11G1, 2 H11G3 VCE(sat) H11G1, 2 H11G1, 2 H11G3 VISO CIO ton toff -- -- -- 7500 -- -- 0.75 0.85 0.85 -- 1011 2 1 1 1.2 -- -- -- Vac(pk) Ohms pF s 100 (1000) 5 (500) 2 (200) -- -- -- -- -- -- Volts -- -- -- -- -- -- -- -- -- -- -- 6 100 100 100 100 100 -- nA A nA A nA pF 100 80 55 7 -- -- -- -- -- -- -- -- Volts 100 80 55 -- -- -- -- -- -- Volts Volts IR VF CJ -- -- -- 0.05 1.1 18 10 1.5 -- A Volts pF Symbol Min Typ(1) Max Unit Collector-Base Breakdown Voltage (IC = 100 A, IF = 0) Emitter-Base Breakdown Voltage (IE = 100 A, IF = 0) Collector-Emitter Dark Current (VCE = 80 V) (VCE = 80 V, TA = 80C) (VCE = 60 V) (VCE = 60 V, TA = 80C) (VCE = 30 V) Capacitance (VCB = 10 V, f = 1 MHz) COUPLED (TA = 25C unless otherwise noted) Collector Output Current (VCE = 1 V, IF = 10 mA) (VCE = 5 V, IF = 1 mA) (VCE = 5 V, IF = 1 mA) Collector-Emitter Saturation Voltage (IF = 1 mA, IC = 1 mA) (IF = 16 mA, IC = 50 mA) (IF = 20 mA, IC = 50 mA) Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second) Isolation Resistance(3) (V = 500 Vdc) Isolation Capacitance(3) (V = 0 V, f = 1 MHz) SWITCHING (TA = 25C) Turn-On Time Turn-Off Time 1. 2. 3. 4. (IF = 10 mA, VCC = 5 V, RL = 100 , Pulse Width 300 s, f = 30 Hz) mA (%) p -- -- 5 100 -- -- Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2 Motorola Optoelectronics Device Data H11G1 H11G2 H11G3 TYPICAL CHARACTERISTICS 100 IC, NORMALIZED OUTPUT CURRENT 100 IC, NORMALIZED OUTPUT CURRENT IF = 50 mA IF = 5 mA NORMALIZED TO: TA = 25C IF = 1 mA (300 s PULSES) VCE = 5 V IF = 1 mA IF = 0.5 mA -40 -20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (C) 120 140 10 NORMALIZED TO: VCE = 5 V IF = 1 mA (300 s PULSES) 10 1 1 0.1 0.01 0.1 1 10 100 IF, IRED INPUT CURRENT (mA) 1000 0.1 -60 Figure 1. Output Current versus Input Current Figure 2. Output Current versus Temperature 100 IC, NORMALIZED OUTPUT CURRENT 2 IF = 50 mA VF , FORWARD VOLTAGE (VOLTS) IF = 10 mA IF = 2 mA 1.8 PULSE ONLY PULSE OR DC 10 1.6 1 IF = 1 mA IF = 0.5 mA 1.4 TA = -55C 1.2 25C 100C 1 10 100 1000 IF, LED FORWARD CURRENT (mA) 0.1 0.01 0.2 NORMALIZED TO: TA = 25C IF = 1 mA (300 s PULSES) VCE = 5 V 10 1 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 1 Figure 3. Output Current versus Collector-Emitter Voltage Figure 4. LED Forward Characteristics 100 k VCE = 80 V IF, FORWARD CURRENT (mA) 10 k I CEO, DARK CURRENT VCE = 30 V 1000 10 RL = 10 RL = 100 RL = 1 k 1 100 VCE = 10 V 10 1 0 10 20 30 40 50 60 70 TA, AMBIENT TEMPERATURE (C) 80 90 100 0.1 0.1 NORMALIZED TO: IF = 10 mA RL = 100 OHMS VCC = 5 V 1 ton + toff, TOTAL SWITCHING SPEED (NORMALIZED) 10 Figure 5. Collector-Emitter Dark Current versus Temperature Figure 6. Input Current versus Total Switching Speed (Typical Values) Motorola Optoelectronics Device Data 3 H11G1 H11G2 H11G3 INTERFACING TTL OR CMOS LOGIC TO 50-VOLT, 1000-OHMS RELAY FOR TELEPHONY APPLICATIONS In order to interface positive logic to negative-powered electromechanical relays, a change in voltage level and polarity plus electrical isolation are required. The H11Gx can provide this interface and eliminate the external amplifiers and voltage divider networks previously required. The circuit below shows a typical approach for the interface. VDD R TO 1 H11Gx CMOS 5V 2 180 1/4 W TO 1 3 4 1000 -50 V TTL TO 2 50 mA 1N4004 5 RELAY GROUND TO 2 1 6 4 Motorola Optoelectronics Device Data H11G1 H11G2 H11G3 PACKAGE DIMENSIONS -A- 6 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 -B- 1 3 F 4 PL N C L STYLE 1: PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE NC EMITTER COLLECTOR BASE -T- SEATING PLANE K G J 6 PL 0.13 (0.005) TA M M E 6 PL D 6 PL 0.13 (0.005) M M TB M A M B M CASE 730A-04 ISSUE G -A- 6 1 4 -B- 3 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 F 4 PL H C L -T- G E 6 PL D 6 PL 0.13 (0.005) M J K 6 PL 0.13 (0.005) TA M M SEATING PLANE TB M A M B M DIM A B C D E F G H J K L S CASE 730C-04 ISSUE D *Consult factory for leadform option availability Motorola Optoelectronics Device Data 5 H11G1 H11G2 H11G3 -A- 6 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 -B- 1 3 F 4 PL N C L -T- SEATING PLANE G D 6 PL K 0.13 (0.005) M J TA M E 6 PL B M *Consult factory for leadform option availability CASE 730D-05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Optoelectronics Device Data H11G1/D *H11G1/D* |
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